NITROGEN-POLAR SEMIPOLAR GAN LAYERS AND DEVICES ON SAPPHIRE SUBSTRATES

摘要

Methods and structures for forming epitaxial layers of semipolar Ill-nitride materials on patterned sapphire substrates are described. Semi-nitrogen-polar GaN may be grown from inclined c-plane facets of sapphire and coalesced to form a continuous layer of (2021) GaN over the sapphire substrate. Nitridation of the sapphire and a low-temperature GaN buffer layer is used to form semi-nitrogen-polar GaN.