Method of manufacturing a silver alloy bump for a semiconductor structure using a cyanide-based plating bath

摘要

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a conductive pad (102) on a semiconductor die (100); forming a seed layer (105) over the conductive pad (102); defining a first mask layer (109) over the seed layer (105); and forming a silver alloy bump body (101) in the first mask layer (109). The forming a silver alloy bump body (101) in the first mask layer (109) includes operations of preparing a first cyanide-based bath (113); controlling a pH value of the first cyanide-based bath (113) to be within a range of from about 6 to about 8; immersing the semiconductor die (100) into the first cyanide-based bath (113); and applying an electroplating current density of from about 0.1 ASD to about 0.5 ASD to the semiconductor die (100). The silver alloy of the silver alloy bump body (101) comprises gold and/or palladium. The first cyanide-based bath (113) comprises KAg(CN)2, KAu(CN)2 and/or K2Pd(CN)4.