首页> 外国专利> INTERMEDIATE BAND SEMICONDUCTORS, HETEROJUNCTIONS, AND OPTOELECTRONIC DEVICES UTILIZING SOLUTION PROCESSED QUANTUM DOTS, AND RELATED METHODS

INTERMEDIATE BAND SEMICONDUCTORS, HETEROJUNCTIONS, AND OPTOELECTRONIC DEVICES UTILIZING SOLUTION PROCESSED QUANTUM DOTS, AND RELATED METHODS

机译:利用溶液处理量子点的中间带半导体,异质结和光电器件及相关方法

摘要

A semiconductor includes first quantum dots and second quantum dots of a lesser amount, which are dispersed throughout the first quantum dots. The second quantum dots have a different size or composition than the first quantum dots such that the second quantum dots have a first exciton peak wavelength longer than a first exciton peak wavelength of the first quantum dots. The quantum dot layer includes a valence band, a conduction band, and an intermediate band having an energy level within a bandgap between the valence band and the conduction band. The quantum dots may be solution processed. The semiconductor may be utilized to form an electronic heterojunction, and optoelectronic devices including the electronic heterojunction.
机译:半导体包括较少量的第一量子点和第二量子点,它们分散在整个第一量子点中。第二量子点具有与第一量子点不同的尺寸或组成,使得第二量子点具有比第一量子点的第一激子峰值波长更长的第一激子峰值波长。量子点层包括价带,导带和中间带,该中间带的能级在价带和导带之间的带隙内。量子点可以被溶液处理。半导体可用于形成电子异质结,以及包括电子异质结的光电器件。

著录项

  • 公开/公告号EP2912695A1

    专利类型

  • 公开/公告日2015-09-02

    原文格式PDF

  • 申请/专利权人 RESEARCH TRIANGLE INSTITUTE;

    申请/专利号EP20130849349

  • 发明设计人 KLEM ETHAN;LEWIS JOHN;

    申请日2013-10-25

  • 分类号H01L31/04;H01L31/18;

  • 国家 EP

  • 入库时间 2022-08-21 15:02:06

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