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Method for manufacturing free standing thin film and thin film manufactured by the method

机译:静置薄膜的制造方法以及通过该方法制造的薄膜

摘要

The invention process for producing a free-standing thin film capable of producing a free-standing thin film with a thin thickness and to a free-standing thin film to be produced by it. Method for producing a free-standing thin film according to the present invention: (a) a step of preparing a substrate hole is formed, (b) and forming a liquid PDMS is applied to the hole formed in the liquid PDMS substrate, (c) liquid PDMS film includes the step of transition of the solid oxide films. Method for producing a free-standing thin film according to the present invention by applying a non-liquid phase in the polymerization of the PDMS substrate is a hole formed in the oxide film, and this transition, forming a thin film through spin coating as in the prior art, and the sacrificial layer (sacrificial layer) the removal process and it is possible to form a thin, free-standing thin film thickness, even if you do not perform such as to transfer the thin film to another substrate (transfer) easily in the hole of the substrate. ;
机译:本发明的自立式薄膜的制造方法,其能够制造出厚度薄的自立式薄膜,以及由其制造的自立式薄膜。根据本发明的用于制造自支撑薄膜的方法:(a)形成准备衬底孔的步骤,(b)将形成液体PDMS的步骤应用于在液体PDMS衬底中形成的孔,(c液体PDMS膜包括固体氧化物膜的转变步骤。通过在PDMS基板的聚合中施加非液相来制造根据本发明的自支撑薄膜的方法是在氧化膜中形成孔,并且该转变通过如在图1中的旋涂法形成薄膜。现有技术,以及牺牲层(牺牲层)的去除工艺,即使不进行诸如将薄膜转移到另一个基板(转移)的操作,也可以形成薄的,自支撑的薄膜厚度容易在基板的孔中。 ;

著录项

  • 公开/公告号KR101468202B1

    专利类型

  • 公开/公告日2014-12-01

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20120114280

  • 发明设计人 김영록;임민철;

    申请日2012-10-15

  • 分类号C08J5/18;C08J7/18;C08L83/04;C09D183/04;

  • 国家 KR

  • 入库时间 2022-08-21 15:01:09

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