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CMP COMPOSITIONS AND METHODS FOR SUPPRESSING POLYSILICON REMOVAL RATES
CMP COMPOSITIONS AND METHODS FOR SUPPRESSING POLYSILICON REMOVAL RATES
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机译:用于抑制多晶硅去除速率的CMP组合物和方法
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摘要
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
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