QUANTUM DOT ORGANIC BULK HETEROJUNCTION PHOTODETECTOR OF NANO STRUCTURE

摘要

The present invention relates to a quantum dot organic bulk heterojunction photodetector of nanostructure. More particularly, the present invention includes an electron carrier material, a first light absorption material, a hole donor material including a conductive organic material, an electron donor material including a conductive organic material, and a second light absorption material of a heterojunction bulk shape of the hole donor material and the electron carrier material. A quantum dot organic bulk heterojunction photodetector of nanostructure according to the present invention minimizes the demerits of existing silicon and compound semiconductor, absorbs the light of a wider frequency band, has high sensitivity and high efficiency, realizes mass production with excellent stability, cheap raw materials and moderate process conditions.