Fabrication of high power AlGaInP light emitting diode grown directly on transparent substrate

摘要

The present invention is a high efficiency grown directly on a transparent substrate AlGaInP light-emitting diode and its manufacturing relates to a method and, more particularly, a high-efficiency related to growth on a sapphire substrate AlGaInP -based light-emitting diode and a method of manufacturing the same . By the present invention, inexpensive and ultraviolet , infrared , and the AlGaInP -based diode using a sapphire substrate is excellent translucent for visible light was prepared. Further, the light emitting diode according to the present invention is a high efficiency light emission is possible and does not light is absorbed by the lower substrate , a GaAs substrate or a sapphire substrate to remove the bonding process can be an effective production . ;