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REDUCED CURRENT REQUIREMENTS FOR DRAM SELF-REFRESH MODES

机译:DRAM自刷新模式的降低的电流需求

摘要

embodiments of the present invention to run a self-refresh is initiated by the DRAM device systems to reduce the instantaneous power required is described a method of , and apparatus . Embodiments of the invention will be described for the DRAM device is enabled to self-refresh the stagger between the plurality of banks . Staggered between the banks of the self-refresh to reduce the current required in the DRAM self-refresh , and thus reduces the amount of current required by the DRAM device .
机译:本发明的实施例运行自刷新是由DRAM设备系统发起以减少所需的瞬时功率的方法和装置。将描述本发明的实施例,其使得DRAM设备能够自刷新多个存储体之间的交错。在自刷新的存储体之间交错以减少DRAM自刷新所需的电流,从而减少DRAM设备所需的电流量。

著录项

  • 公开/公告号KR1015145840000B1

    专利类型

  • 公开/公告日2015-04-22

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR1020137008077

  • 发明设计人 바인스 쿨지트 에스.;

    申请日2011-09-26

  • 分类号G11C11/401;G06F12/00;G11C11/4063;

  • 国家 KR

  • 入库时间 2022-08-21 14:58:19

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