zirconium oxide and zirconium oxynitride film forming method and a semiconductor device and its manufacturing method using the same

摘要

zirconium oxide film having a high dielectric constant and forming method for forming a semiconductor device using a semiconductor that is formed by this method, and this It provides a system device using the device. Dielectric is formed of a high zirconium oxide and zirconium oxynitride double structure , or zirconium oxide , and zirconium oxide and zirconium oxynitride film semiconductor device using the structure of the three is no need to form a conductive film electrode of a large area with a unique structure not land Ricky it is possible to increase the capacity of the coating device .