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HIGH-PURITY ERBIUM SPUTTERING TARGET COMPRISING HIGH-PURITY ERBIUM METAL GATE FILM HAVING HIGH-PURITY ERBIUM AS MAIN COMPONENT THEREOF AND PRODUCTION METHOD FOR HIGH-PURITY ERBIUM
HIGH-PURITY ERBIUM SPUTTERING TARGET COMPRISING HIGH-PURITY ERBIUM METAL GATE FILM HAVING HIGH-PURITY ERBIUM AS MAIN COMPONENT THEREOF AND PRODUCTION METHOD FOR HIGH-PURITY ERBIUM
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机译:包含以高纯度M为主要成分的高纯度E金属栅膜的高纯度E溅射靶及高纯度E的制造方法
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摘要
A rare earth element and a gaseous component, wherein the purity is not less than 5N, and each of Al, Fe, Cu and Ta is not more than 1 wtppm, W is not more than 10 wtppm, carbon is not more than 150 wtppm, alkali metals and alkaline earth metals are each not more than 1 wtppm, And the radioactive elements U and Th are each 10 wt ppb or less. A method for highly purifying erbium which has a high vapor pressure and is difficult to purify in a molten state, and a method for efficiently and stably providing a high-purity erbium, a sputtering target made of erbium of high purity and a metal gate thin film containing erbium as a main component And to provide a technology that can be used.
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