/ D/SRAMDYNAMIC/STATIC RANDOM ACCESS MEMORY D/SRAM

摘要

dynamic / static random access memory (dynamic / static random access memory (D / SRAM )) cell, a static random access memory block shift (block shift static random access memory (BS-SRAM)), and this method is used for dynamic data storage mode to the shift mode switching and dynamic storage use. D / SRAM cells are SRAM having a pair of cross-coupled elements to store data (static random access memory) cell and a dynamic storage mode and the static storage between mode switching selectably the D / SRAM cell D / S (dynamic / static) and a mode selector. BS-SRAM includes a controller for shifting the cell D / SRAM in the first row from the adjacent D / SRAM cell in the second row of a plurality of D / SRAM cells arranged in an array and a data array. Method includes switching a mode of the selected D / SRAM cell, the adjacent memory coupling cell selected D / SRAM from the cell data, the combined data includes the step of storing the selected D / SRAM cell. ;