Mim - capacitors in semiconductor components being covered and method for the manufacture of a finger capacitor

摘要

Capacitor (11), comprising:a first electrode (150);a second electrode (160); anda between the first electrode (150) and the second electrode (160) arranged dielectric layer stack (110, 120), wherein the dielectric layer stack (110, 120) a first dielectric layer (110) and a second dielectric layer (120) comprises,the first dielectric layer (110) consists of a first material and wherein the second dielectric layer (120) consists of a second material,wherein, in the first dielectric layer (110) and a metal lines are arranged by contacting plane,and wherein in the second dielectric layer (120) and a metal lines are arranged by contacting plane,and wherein the capacitor (11) in a plurality of metal planes (m1, m2) in a semiconductor device (10) is arranged,the first (110) and the second dielectric layer (120) materials with the opposite temperature - coefficients of the capacitance (tcc) or voltage - coefficients of the capacitance (vcc) comprise.