A method and structure for increasing the performance, and of the reduction in the nbti (negative bias temperature inst ability) of a mosfet

摘要

A method for forming a field effect transistor structure (100) of the p - type (pfet), said method comprising:The formation of a mask layer (118) on a semiconductor substrate (110), wherein the mask layer (118) an opening (120) having a semiconductor region (114a) of the semiconductor substrate (110) within the opening (120) exposes;Forming a n - type - trough (n - trough) (122) in the semiconductor region (114a) by applying an ion implantation of n - - dopant type to the semiconductor substrate (110) through the opening (120) of the mask layer (118); andApplying a germanium (ge) - channel implantation to the semiconductor substrate (110) through the opening (120) of the mask layer (118), as a result of which a ge - channel implantation region (124) in the n - trough (122) is formed.