Schottky - barriers - diode and method for the production of a schottky - barriers - diode

摘要

A schottky - barriers - diode and a method for producing the schottky - barriers - diode are provided. The diode has an n – type - epitaxial layer, which on a first surface of an n + type - silicon carbide - substrate is arranged and an upper surface, a lower surface and an inclined surface, which the upper surface and the lower surface, has. A p region is on the inclined surface of the n – type - epitaxial layer is arranged, and a schottky - electrode is on the upper surface of the n – type - epitaxial layer and the p region. In addition, an ohmic electrode on a second surface of the n + type - silicon carbide - substrate.