Schottky - barriers - diode and method for the production of a schottky - barriers - diode

摘要

A schottky - barriers - diode and a method for the production of the diode are provided. The diode has an n – type - epitaxial layer (200) on a first surface of an n + type - silicon carbide - substrate (100) is formed, and a plurality of p + areas (300), which in the n – type - epitaxial layer (200), are designed. An n + type - epitaxial layer (400) is provided on the n – type - epitaxial layer (200), a schottky - electrode (500) is provided on the n + type - epitaxial layer (400) is formed, and an ohmic electrode (600) is supported by a second surface of the n + type - silicon carbide - substrate (100) is formed. The n + type - epitaxial layer (400) has a plurality of columns parts (410), which on the n – type - epitaxial layer (200) are formed, and a plurality of openings (420), which is between the columns parts (410) are formed and the p + areas (300) exposing, on. Each of the column members (410) has essentially straight parts (411), which the n – type - epitaxial layer (200) contacting, and substantially curvilinear parts (412), which extend from the substantially rectilinear parts (411), on.