A method for depositing a piezoelectric aln - alloy layer, as well as a piezoelectric layer containing aln -

摘要

The invention relates to a method for depositing a piezoelectric aln - alloy layer on a substrate (2) by means of a magnetron sputtering - at least two targets (4; 5), of which at least one target (4; 5) comprises aluminum, within a vacuum chamber (1), wherein a gas mixture into the vacuum chamber (1) is inserted, which is at least the reactive gas, nitrogen and an inert gas, wherein during the magnetron sputtering - alternately of the unipolar pulse mode and the bipolar pulse mode be used. The present invention also relates to a aln - containing layer of the formula al_XN_YO_Z, wherein (0,1 ≦ x ≦ 1,2); (0,1 ≦ y ≦ 1,2) and (0,001 ≦ z ≦ 0,1) are.