An electroluminescent diode (100) having an n-doped InXnGa (1-Xn) N layer (102) and a p-doped GaN layer (104), and an active region (110) comprising m InYiGa emitting layers (1) Yi) N (112) each disposed between two barrier layers of InZjGa (1-Zj) N (114), wherein: for i between 1 and m-1, the indium compositions of the emitting layers are such that Y (i + 1) Yi, the (i + 1) th emissive layer being disposed between the (i) th emissive layer and the p-doped GaN layer; for j between 1 and m, the indium compositions of the barrier layers are such that Z (j + 1) Zj, the (j + 1) th barrier layer being disposed between the (j) th barrier layer and the layer p-doped GaN; for i = j, the indium compositions of the emissive layers and the barrier layers are such that Zj Yi and Z (j + 1) Yi.
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