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DEVICE ARCHITECTURE AND METHOD FOR TEMPERATURE COMPENSATION OF VERTICAL FIELD EFFECT DEVICES
DEVICE ARCHITECTURE AND METHOD FOR TEMPERATURE COMPENSATION OF VERTICAL FIELD EFFECT DEVICES
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机译:垂直场效应器件的温度补偿的装置架构和方法
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摘要
A field effect device is disclosed that provides a reduced variation in on-resistance as a function of junction temperature. The field effect device, having a source junction, gate junction and drain junction, includes a resistive thin film adjacent the drain junction wherein the resistive thin film comprises a material having a negative temperature coefficient of resistance. The material is selected from one or more materials from the group consisting of doped polysilicon, amorphous silicon, silicon-chromium and silicon-nickel, where the material properties, such as thickness and doping level, are chosen to create a desired resistance and temperature profile for the field effect device. Temperature variation of on-resistance for the disclosed field effect device is reduced from the temperature variation for a similar field effect device without the resistive thin film.
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