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A SEMICONDUCTOR PIXEL UNIT FOR SENSING NEAR-INFRARED LIGHT, OPTIONALLY SIMULTANEOUSLY WITH VISIBLE LIGHT, AND A SEMICONDUCTOR SENSOR COMPRISING SAME
A SEMICONDUCTOR PIXEL UNIT FOR SENSING NEAR-INFRARED LIGHT, OPTIONALLY SIMULTANEOUSLY WITH VISIBLE LIGHT, AND A SEMICONDUCTOR SENSOR COMPRISING SAME
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机译:一种半导体像素单元,用于感知近红外光,还可以同时与可见光同时感应,并且具有相同的半导体传感器
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摘要
A semiconductor pixel unit for sensing near-infrared (NIR) light, and for optionally simultaneously sensing visible (R,G,B) light. The pixel unit comprises a single substrate with a first semiconductor region (101) and a second semiconductor region (104) electrically separated by an insulating region (102), for example a buried oxide layer. The pixel unit is adapted for generating a lateral electrical field (Edrift) in the second region (104) for facilitating transport of photoelectrons generated in the second region by near-infrared light (N) passing through the first region (101) and the insulating region (102).
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