Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure

摘要

The present invention relates to a semiconductor structure comprising- a buffer layer stack comprising a plurality of III-V material layers, the buffer layer stack comprising at least one layered substructure, the layered substructure comprising a compressive stress inducing structure between a respective first buffer layer and respective second buffer layer positioned higher in the buffer layer stack than the respective first buffer layer, a lower surface of the respective second buffer layer having a lower Al content than an upper surface of the respective first buffer layer;- an active semiconductor layer of the III-V type provided on the buffer layer stack; and a method for producing the semiconductor structure.