BOTTOM GATE BOTTOM CONTACT THIN FILM TRANSISTOR, METHOD OF MANUFACTURING BOTTOM GATE BOTTOM CONTACT THIN FILM TRANSISTOR, AND IMAGE DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor where a drain electrode is not covered by mistake, when covering the source wiring with a protective layer, and to provide a thin film transistor manufactured by that method, and an image display device.SOLUTION: In a bottom gate, bottom contact thin film transistor, a protective layer 8 for protecting a semiconductor layer is formed so as to cover the gate electrodes 2 formed on a substrate 1, i.e., a support, at regular intervals in stripe, stripe semiconductor layers 7 formed in parallel at regular intervals perpendicularly to the gate electrode, while connecting the source electrode 4 and drain electrode 5 formed on a gate insulator layer 3 covering the gate electrode and the substrate, and source wiring 6 connecting the semiconductor layer thereof and the source electrode and the source electrode arranged in parallel with the semiconductor layer thereof in parallel.SELECTED DRAWING: Figure 1