Formation of I-III-VI2 Semiconductor Layer by Heat Treatment and Chalcogenization of I-III Metal Precursor

摘要

The present invention relates to the field of industrial processes, particularly for forming semiconductor layers intended for photovoltaic applications, and more particularly by heat treatment and chalcogenization of type I-III metal precursors. A process for forming a semiconductor layer comprising: a heating step in an inert atmosphere, during which the temperature rises uniformly to a first temperature T1 of 460 ° C. to 540 ° C. A heating step S1 enabling densification of the body (2), and a-chalcogenization step, which starts at the first temperature T1, during which the temperature is a stabilization temperature of 550 ° C. to 600 ° C. And a chalcogenization step S2 which continues to rise to temperature T2 and allows the formation of a semiconductor layer. The formation of a semiconductor layer, or equivalently an absorber, resulting in an increase in conversion efficiency of about 4% is thus advantageously achieved.