MANUFACTURING METHOD OF EPITAXIAL SILICON WAFER, AND VAPOR GROWTH DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a vapor growth device capable of providing an epitaxial silicon wafer with a small LPD density and high quality.SOLUTION: The vapor growth device comprises an exhaustion adjusting part 9 which is provided within an exhaust pipe 8 and adjusts exhaustion of a reaction chamber 2. The exhaustion adjusting part 9 includes: an upstream baffle 91 formed in a frustum cylindrical shape in which a first opening 91A closer to the reaction chamber 2 is larger than a second opening 91B closer to an exhaustion device 7; and a downstream baffle 92 which is provided closer to the exhaustion device 7 than the upstream baffle 91 and formed in a frustum cylindrical shape in which a third opening 92A closer to the reaction chamber 2 is larger than a fourth opening 92B closer to the exhaustion device 7. The upstream baffle 91 and the downstream baffle 92 are formed in such a manner that, when an inner diameter of the exhaust pipe 8, a diameter of the first opening 91A, and a diameter of the third opening 92A are defined as A, a diameter of the second opening 91B is defined as B, and a diameter of the fourth opening 92B is defined as C, conditions that B/A and C/A are 0.33 or less, at least one of B/A and C/A is 0.26 or less, and (B+C)/A is 0.59 or less are satisfied.SELECTED DRAWING: Figure 2