A novel infrared imaging sensor using a solution-processed lead sulfide photodetector

摘要

An image sensor is constructed on a substrate, which is a readout transistor array, on which a multilayer array of infrared photodetectors is formed. The infrared photodetector comprises a number of layers with infrared transparent electrodes on the distal side of the substrate, a counter electrode in direct contact with the substrate, and an infrared sensitive layer containing a number of nanoparticles. This layer may be an inorganic material or an organic material. In addition to the electrode and the photosensitive layer, the overlapping multilayer structure may comprise a hole blocking layer, an electron blocking layer, and an antireflection layer. The infrared photosensitive layer may be PbS or PbSe quantum dots. [Selection figure] None