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RESIDUAL LAYER REMOVAL METHOD AND RESIDUAL LAYER REMOVAL DEVICE

机译:残留层去除方法和残留层去除装置

摘要

PROBLEM TO BE SOLVED: To provide a residual layer removal method capable of improving removal efficiency of a residual layer formed on a side face of a convex structure.SOLUTION: In a residual layer removal method, an electric field lens 14 is arranged between a GCIB irradiation device 13 linearly irradiating a wafer W with an oxygen GCIB and the wafer W, the wafer having a plurality of pillar structures 35 which stand close together on the surface of the wafer W and have a residual layer 36 formed on a side face thereof. The electric field lens 14 diverges the oxygen GCIB comprising a plurality of oxygen gas clusters 26, and scans the surface of the wafer W with the diverged oxygen GCIB.SELECTED DRAWING: Figure 7
机译:解决的问题:提供一种残留层去除方法,其能够提高形成在凸结构的侧面上的残留层的去除效率。解决方案:在残留层去除方法中,在GCIB之间布置电场透镜14。辐照装置13用氧GCIB和晶片W线性地辐照晶片W,晶片具有多个柱状结构35,这些柱状结构35在晶片W的表面上紧密地并排放置,并且在其侧面上形成有残留层36。电场透镜14使包括多个氧气簇26的氧气GCIB发散,并用发散的氧气GCIB扫描晶片W的表面。图7

著录项

  • 公开/公告号JP2016042530A

    专利类型

  • 公开/公告日2016-03-31

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LTD;

    申请/专利号JP20140165946

  • 发明设计人 HARA KENICHI;FUSHIMI NAOSHIGE;

    申请日2014-08-18

  • 分类号H01L21/304;H01L21/3065;H01L21/302;H01J37/305;H01J37/08;H01J37/12;

  • 国家 JP

  • 入库时间 2022-08-21 14:44:13

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