Β-Ga2O3-based single crystal substrate for growth of Ga-containing oxide layer

摘要

Provided are: a crystal laminate structure, in which crystals can be epitaxially grown on a ²-Ga 2 O 3 -based substrate with high efficiency to produce a high-quality ²-Ga 2 O 3 -based crystal film on the substrate; and a method for producing the crystal laminate structure. Provided is a crystal laminate structure (2) comprising: a ²-Ga 2 O 3 -based substrate (1), of which the major face (10) is a face that is rotated by 50 to 90° inclusive with respect to face (100); and a ²-Ga 2 O 3 -based crystal film (2) which is formed by the epitaxial crystal growth on the major face (10) of the ²-Ga 2 O 3 -based substrate (1).