首页> 外国专利> ON-RESISTANCE MEASURING METHOD FOR SEMICONDUCTOR ELEMENT AND ON-RESISTANCE MEASURING DEVICE FOR SEMICONDUCTOR ELEMENT

ON-RESISTANCE MEASURING METHOD FOR SEMICONDUCTOR ELEMENT AND ON-RESISTANCE MEASURING DEVICE FOR SEMICONDUCTOR ELEMENT

机译:半导体元件的导通电阻的测定方法及半导体元件的导通电阻的测定装置

摘要

PROBLEM TO BE SOLVED: To provide on-resistance measuring method and device for a semiconductor element with high precision.SOLUTION: A process for measuring on-resistance of a semiconductor element comprises a step of measuring the on-resistance of a semiconductor element provided to a substrate portion on a first area 31 under the state that a substrate is sucked by at least one suction hole 4a located in the first area 31, but the substrate is not sucked by at least one suction hole 4a located in an area of the surface 4b from which the first area 31 is excluded, and a step of measuring the on-resistance of a semiconductor element provided to a substrate portion on a second area 32 under the state that the substrate is sucked by at least one suction hole located in a second area 32, but the substrate is not sucked by at least one suction hole 4a located an area of the surface 4b from which the second area 32 is excluded.
机译:解决的问题:提供高精度的半导体元件的导通电阻测量方法和装置。解决方案:测量半导体元件的导通电阻的过程包括测量提供给半导体元件的半导体元件的导通电阻的步骤。在基板被位于第一区域31中的至少一个抽吸孔4a抽吸,但是基板未被位于表面区域中的至少一个抽吸孔4a抽吸的状态下,第一区域31上的基板部分被抽吸的状态。在图4b中,从第一区域31中排除了第一区域31,并且在基板被位于第二区域32中的至少一个抽吸孔抽吸的状态下测量提供给第二区域32上的基板部分的半导体元件的导通电阻的步骤。第二区域32,但是基板不被位于表面4b的其中第二区域32被排除的区域的至少一个抽吸孔4a抽吸。

著录项

  • 公开/公告号JP2015220286A

    专利类型

  • 公开/公告日2015-12-07

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC IND LTD;

    申请/专利号JP20140101569

  • 发明设计人 ITO SATOMI;

    申请日2014-05-15

  • 分类号H01L21/66;G01R31/26;

  • 国家 JP

  • 入库时间 2022-08-21 14:43:45

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