Plasma nitriding treatment method and a plasma nitriding treatment equipment

摘要

The processing container 1 of plasma nitriding processing apparatus 100, the total flow rate of the process gas volume per 1L of the processing vessel as [(sccm) mL / min] 1.5 (mL, the flow rate of the process gas containing a rare gas and nitrogen gas / is introduced to be in the range min) / L more than 13 (mL / min) / L or less, to produce a nitrogen-containing plasma in the processing chamber 1, and nitriding continuously while exchanging the wafer W. Be in the range of 0.05 to 0.8 is preferred volumetric flow ratio of the rare gas and nitrogen gas (nitrogen gas / inert gas).