PLASMA NITRIDING TREATMENT METHOD AND PLASMA NITRIDING TREATMENT DEVICE

摘要

plasma nitriding device 100 of the processing container 1 , a nitrogen gas and a rare gas , which includes the introduced so that the flow rate of the process gas , the total volume of the process gas flow rate per 1L of the processing vessel [mL / min (sccm)] with the 1.5 (mL / min) / L more than 13 (mL / min) / L in the range of less than and , to generate a nitrogen-containing plasma in the processing vessel , and nitriding continuously exchange the wafer (W). Volume flow rate of nitrogen gas and rare gas ( nitrogen gas / inert gas ) is preferably in the range of 0.05 to 0.8.