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Current application method and the current application device

机译:当前的应用方法和当前的应用设备

摘要

PROBLEM TO BE SOLVED: To provide a current application method and a current application device capable of preventing destruction of a semiconductor resulting from residual electricity in the semiconductor.SOLUTION: A current application method for applying currents to a power semiconductor 100 that includes a first signal pin contact region 102 to which a first current is applied; and a contact body contact region 101 that is electrically connected to the first signal pin contact region 102 and to which a second current is applied, comprises: a step S1 of bringing a first signal pin 32 of a probe device 1 to contact the first signal pin contact region 102, and eliminating residual electricity in the first signal pin contact region 102 and the contact body contact region 101; and steps S3 and S4, after step S1, of bringing a contactor 21 of a contact body 2 of the probe device 1 into contact with the contact body contact region 101, and applying the first current and the second current.
机译:解决的问题:提供一种电流施加方法和电流施加装置,该电流施加方法和电流施加装置能够防止由于半导体中的残留电导致的半导体破坏。施加第一电流的pin接触区域102;电连接到第一信号引脚接触区域102并施加第二电流的接触体接触区域101包括:步骤S1,使探针装置1的第一信号引脚32接触第一信号。销接触区域102,并消除第一信号销接触区域102和接触体接触区域101中的残留电;在步骤S1之后,使探针装置1的接触体2的接触器21与接触体接触区域101接触,并施加第一电流和第二电流,并进行步骤S3和S4。

著录项

  • 公开/公告号JP5901570B2

    专利类型

  • 公开/公告日2016-04-13

    原文格式PDF

  • 申请/专利权人 本田技研工業株式会社;

    申请/专利号JP20130098603

  • 发明设计人 赤堀 重人;神原 将郎;

    申请日2013-05-08

  • 分类号G01R31/26;

  • 国家 JP

  • 入库时间 2022-08-21 14:41:40

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