metal nitride using a compound of an amino metal precursor and a metal halide precursor-containing film deposition

摘要

I discloses a method of forming the compound with the metal halide precursor and amino-metal precursor metal nitride-containing film is formed from compounds with the chlorosilane precursor aminosilane precursor SiN-containing film preferably. That to change the sequential reaction of metal halide precursor and amino metal precursor provides for the formation of metal nitride-containing film having a stoichiometric ratio of variety. In addition, it can be changed based on the structure of the amino metal precursor, the composition of the metal nitride-containing film. The disclosed methods may be either a plasma process at low temperature or may be a thermal process. [Selection] Figure Figure 1