Reference voltage generating circuit, D / the A conversion circuit, and a display panel driving semiconductor device using such a semiconductor device, and electronic apparatus

摘要

PROBLEM TO BE SOLVED: To provide a reference voltage generation circuit whose resistance value in latch-up resistance test is high and whose chip size can be easily reduced.;SOLUTION: In a reference voltage generation circuit having three or more reference voltage terminals, an N-type semiconductor region 15 is disposed so as to be held between an N-type semiconductor region 13a formed in a P-type well 11 constituting an ESD protection element connecting to one of a pair of adjacent reference voltage terminals and an N-type semiconductor region 13b formed in the same P-type well 11 constituting an ESD protection element connecting to the other of the pair of adjacent reference voltage terminals. An intermediate voltage higher than a substrate potential applied to the P-type well 11 and lower than a predetermined threshold voltage is applied to the N-type semiconductor region 15, whereby collector losses due to a collector current flowing in the N-type semiconductor region 13a or 13b caused by a parasitic transistor at the time of latch-up resistance test are reduced.;COPYRIGHT: (C)2013,JPO&INPIT