首页> 外国专利> COMMON-SUBSTRATE SEMICONDUCTOR DEVICES HAVING NANOWIRES OR SEMICONDUCTOR BODIES WITH DIFFERING MATERIAL ORIENTATION OR COMPOSITION

COMMON-SUBSTRATE SEMICONDUCTOR DEVICES HAVING NANOWIRES OR SEMICONDUCTOR BODIES WITH DIFFERING MATERIAL ORIENTATION OR COMPOSITION

机译:具有纳米线或半导体本体且材料取向或组成不同的通用基板半导体器件

摘要

Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition and methods to form such common-substrate devices are described. For example, a semiconductor structure includes a first semiconductor device having a first nanowire or semiconductor body disposed above a crystalline substrate. The first nanowire or semiconductor body is composed of a semiconductor material having a first global crystal orientation. The semiconductor structure also includes a second semiconductor device having a second nanowire or semiconductor body disposed above the crystalline substrate. The second nanowire or semiconductor body is composed of a semiconductor material having a second global crystal orientation different from the first global orientation. The second nanowire or semiconductor body is isolated from the crystalline substrate by an isolation pedestal disposed between the second nanowire or semiconductor body and the crystalline substrate.
机译:描述了具有纳米线或具有不同材料取向或组成的半导体本体的共衬底半导体器件以及形成这种共衬底器件的方法。例如,半导体结构包括具有设置在晶体衬底上方的第一纳米线或半导体本体的第一半导体器件。第一纳米线或半导体主体由具有第一整体晶体取向的半导体材料组成。半导体结构还包括第二半导体器件,该第二半导体器件具有设置在结晶衬底上方的第二纳米线或半导体本体。第二纳米线或半导体主体由具有与第一全局取向不同的第二全局晶体取向的半导体材料组成。通过设置在第二纳米线或半导体本体与晶体衬底之间的隔离基座将第二纳米线或半导体本体与晶体衬底隔离。

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