DRIVE CONTROL METHOD OF POWER SEMICONDUCTOR MODULE AND CONTROL CIRCUIT OF POWER SEMICONDUCTOR MODULE

摘要

An IGBT provided on the high voltage side uses the sensing function of the IGBT to detect a current and prevents the IGBT from breaking due to an overcurrent through a gate drive unit when the current detected by the short-circuit protection unit is determined to be an overcurrent. When detecting an overcurrent, the short-circuit protection unit outputs an alarm signal to a composition unit. Also, it detects the temperature of the power semiconductor module by using a temperature detection element, converts the detected temperature into a digital signal in the temperature information generating unit, and outputs the digitized temperature information to the composition unit. The composition unit composites the temperature information and the alarm signal and one resultant composite output is transmitted to a control unit on the low voltage side.