METHOD OF DETECTING FOCUS SHIFT IN LITHOGRAPHY PROCESS, METHOD OF ANALYZING ERROR OF TRANSFERRED PATTERN USING THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE METHODS

摘要

A method of detecting focus shift in a lithography process, a method of analyzing an error of a transferred pattern using the same, and a method of manufacturing a semiconductor device using the methods are provided. The focus shift detecting method of a lithography process comprises generating a first contour band of a mask pattern between a first focus and a second focus, generating a second contour of the mask pattern between the first focus and a third focus, and determining whether focus shift of the mask pattern occurs using an intersection of the first contour band and the second contour band.