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MEMORY CELLS HAVING TRANSISTORS WITH DIFFERENT NUMBERS OF NANOWIRES OR 2D MATERIAL STRIPS
MEMORY CELLS HAVING TRANSISTORS WITH DIFFERENT NUMBERS OF NANOWIRES OR 2D MATERIAL STRIPS
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机译:具有具有不同数量的纳米线或二维材料条的晶体管的记忆细胞
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摘要
An integrated circuit design tool includes a cell library. The cell library includes entries for a plurality of cells, entries in the cell library including specifications of particular cells in a computer executable language. At least one entry in the cell library can comprise a specification of physical structures and timing parameters of a memory cell including a plurality of transistors, at least some of the transistors in the plurality having channels comprising respective sets of one or more nanowires or 2D material strips, and wherein the channel of one of the transistors in the plurality has a different number of nanowires or 2D material strips than a channel of another transistor in the plurality. An integrated circuit including the memory cell is described.
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