首页> 外国专利> FREE FORM FRACTURING METHOD FOR ELECTRONIC OR OPTICAL LITHOGRAPHY USING RESIST THRESHOLD CONTROL

FREE FORM FRACTURING METHOD FOR ELECTRONIC OR OPTICAL LITHOGRAPHY USING RESIST THRESHOLD CONTROL

机译:基于电阻阈值控制的电子或光学光刻技术的自由形式压裂方法

摘要

A computer implemented method of fracturing free form target design into elementary shots for defined roughness of the contour comprises determining a first set of shots which pave the target design and determining a second set of shots to fill the gaps. The dose levels of overlapping shots in the first or second sets of shots are determined so the compounded dose is adequate to the resist threshold, considering the proximity effect of the actual imprint of shots on the insulated target. A dose geometry modulation is applied and rounded shot prints are produced by shots not circular that may overlap. The degree of overlap is determined as a function of desired optimization of fit criteria between a printed contour and the contour of the desired pattern. Placements and dimensions of the shots are determined by a plurality of fit criteria between printed contour and contour of the desired pattern.
机译:一种将自由形式的目标设计细分为轮廓的基本粗糙度的基本镜头的计算机实现的方法,包括确定铺平目标设计的第一组镜头以及确定填充间隙的第二组镜头。确定第一组或第二组射击中重叠射击的剂量水平,以便考虑到射击实际烙印在绝缘目标上的邻近效应,使混合剂量足以达到抗蚀剂阈值。应用剂量几何形状调制,并通过可能不重叠的非圆形镜头生成圆形镜头。根据印刷轮廓和期望图案的轮廓之间的拟合标准的期望优化来确定重叠程度。镜头的位置和尺寸由印刷轮廓和所需图案轮廓之间的多个拟合标准确定。

著录项

  • 公开/公告号US2016252807A1

    专利类型

  • 公开/公告日2016-09-01

    原文格式PDF

  • 申请/专利权人 ASELTA NANOGRAPHICS;

    申请/专利号US201415033016

  • 发明设计人 SERDAR MANAKLI;LUC MARTIN;

    申请日2014-10-27

  • 分类号G03F1/70;G06F17/50;G03F7/20;

  • 国家 US

  • 入库时间 2022-08-21 14:34:51

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