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LOW COST AND MASK REDUCTION METHOD FOR HIGH VOLTAGE DEVICES
LOW COST AND MASK REDUCTION METHOD FOR HIGH VOLTAGE DEVICES
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机译:高压设备的低成本和降低成本的方法
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摘要
Aspects of the present disclosure provides a device comprising a P-type semiconductor substrate, an N-type tub above the semiconductor substrate, a P-type region provided in the N-type tub isolated by one or more P-type isolation structures, and an N-type punch-through stopper provided under the P-type regions isolated by the isolation structure(s). The punch-through stopper is heavily doped compared to the N-type tub. The P-type region has a width between the two isolation structures that is equal to or less than that of the N-type punch-through stopper.
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