INGOT CUTTING METHOD CAPABLE OF REDUCING WAFER DAMAGE PERCENTAGE

摘要

An ingot cutting method capable of reducing wafer damage percentage, comprising: forming a layer of nanostructures on at least one surface of an ingot; depositing a buffer layer on the layer of nanostructures; fixing the ingot to a mounting plate by applying a layer of epoxy between the buffer layer and the mounting plate; performing a dicing process on the ingot to get a plurality of wafers; and performing an epoxy removal process on the plurality of wafers.