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Semiconductor Device with Trench Gate Structure Including a Gate Electrode and a Contact Structure for a Diode Region
Semiconductor Device with Trench Gate Structure Including a Gate Electrode and a Contact Structure for a Diode Region
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机译:具有沟槽栅结构的半导体器件,该沟槽栅结构包括用于二极管区的栅电极和接触结构
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摘要
A semiconductor device includes trench structures that extend from a first surface into a semiconductor body. The trench structures include a gate structure and a contact structure that extends through the gate structure, respectively. Transistor mesas are between the trench structures. Each transistor mesa includes a body zone forming a first pn junction with a drift structure and a second pn junction with a source zone. Diode regions directly adjoin one of the contact structures form a third pn junction with the drift structure, respectively.
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