首页>
外国专利>
LDMOS FINFET DEVICE AND METHOD OF MANUFACTURE USING A TRENCH CONFINED EPITAXIAL GROWTH PROCESS
LDMOS FINFET DEVICE AND METHOD OF MANUFACTURE USING A TRENCH CONFINED EPITAXIAL GROWTH PROCESS
展开▼
机译:LDMOS FINFET器件和使用沟槽约束的外延生长工艺的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A FinFET transistor includes a fin of semiconductor material with a transistor gate electrode extending over a channel region. Raised source and drain regions of first epitaxial growth material extending from the fin on either side of the transistor gate electrode. Source and drain contact openings extend through a pre-metallization dielectric material to reach the raised source and drain regions. Source and drain contact regions of second epitaxial growth material extend from the first epitaxial growth material at the bottom of the source and drain contact openings. A metal material fills the source and drain contact openings to form source and drain contacts, respectively, with the source and drain contact regions. The drain contact region may be offset from the transistor gate electrode by an offset distance sufficient to provide a laterally diffused metal oxide semiconductor (LDMOS) configuration within the raised source region of first epitaxial growth material.
展开▼