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Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing
Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing
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机译:通过使用集成或独立的热处理来加速松弛应变外延缓冲液的松弛
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摘要
Implementations of the present disclosure generally relate to methods and apparatus for forming a film on a substrate. More particularly, implementations of the present disclosure relate to methods and apparatus for heteroepitaxial growth of crystalline films. In one implementation, a method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate is provided. The method comprises epitaxially depositing a buffer layer over a dissimilar substrate, rapidly heating the buffer layer to relax the buffer layer, rapidly cooling the buffer layer and determining whether the buffer layer has achieved a desired thickness.
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