Planar Stress Relaxation in Solid Phase Epitaxial CaF2 Films Grown on (111)Si by In situ Rapid Isothermal Processing.

摘要

In recent years there has been a considerable increase in the interest in the mechanical properties of epitaxial thin films. The mechanical properties of thin films used for submicron and three-dimensional integrated circuits become more and more important both from performance and reliability viewpoints. As epitaxial dielectrics, thin films of crystalline group II-A fluorides (CaF2, BaF2, SrF2, and their mixtures) are potential insulators because of their cubic fluorite structure which is similar to diamond and zinc blende structures of many useful semiconductors. The use of epitaxial dielectrics is ideally suited for the realization of hybrid superconductor, semiconductor, and optoelectronic devices on the same substrate. One of the major concerns for these materials is the residual stress level, which is directly related to interfacial defects present in these films as a result of a fabrication process. Reprints. (jes)