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ENHANCING ELECTRICAL PROPERTY AND UV COMPATIBILITY OF ULTRATHIN BLOK BARRIER FILM
ENHANCING ELECTRICAL PROPERTY AND UV COMPATIBILITY OF ULTRATHIN BLOK BARRIER FILM
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机译:增强超薄黑障膜的电气性能和紫外线相容性
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摘要
Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N2:NH3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.
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