ENHANCING ELECTRICAL PROPERTY AND UV COMPATIBILITY OF BARRIER FILM

摘要

Embodiments described herein generally relate to the formation of a UV compatible barrier stack. The methods described herein may include delivering a process gas to a substrate positioned in a process chamber. The process gas may be activated to form an activated process gas, which activated process gas forms a barrier layer on the surface of the substrate, which barrier layer comprises silicon, carbon and nitrogen. Thereafter, the activated process gas can be purged from the process chamber. Activated nitrogen-containing gas can be delivered to the barrier layer, which activated nitrogen-containing gas has an N ₂ :NH ₃ ratio of greater than about 1: 1. Thereafter, the activated nitrogen-containing gas can be purged from the process chamber. The components may be performed one or more times to deposit a barrier stack.