Resistive random access memory structure and method for operating resistive random access memory

摘要

A resistive random access memory (RRAM) structure including a first transistor, a second transistor and a RRAM cell string is provided. The first transistor and the second transistor are cascaded by electrically connecting a first terminal of the first transistor and the second transistor. The RRAM cell string includes a plurality of memory cells connected with each other and is electrically connected to a second terminal of the first transistor.