Study on Resistive Switching Characteristics and Mechanisms of Cu/SiO_x/TiN Structure Resistive Random Access Memory

摘要

In this paper, three kinds of resistive switching device based on Cu/SiO_x/TiN structure with different oxygen partial pressures were fabricated to examine and compare their characteristics to explore resistive switching mechanisms. Compared among three samples by Ⅰ-Ⅴ characteristics and uniformity, it turns out that 1% oxygen partial pressure device has a better resistive switching characteristic. According to Ⅰ-Ⅴ curve fitting, Ohimc and SCLC mechanism were concluded at LRS and HRS. And a resistive switching model is proposed based oxygen vacancies migration. Furthermore, the self-compliance behavior is found and explained.