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ATOM PROBE TOMOGRAPHY SAMPLE PREPARATION FOR THREE-DIMENSIONAL (3D) SEMICONDUCTOR DEVICES
ATOM PROBE TOMOGRAPHY SAMPLE PREPARATION FOR THREE-DIMENSIONAL (3D) SEMICONDUCTOR DEVICES
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机译:三维(3D)半导体器件的原子探针层析成像样品制备
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摘要
A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure is provided. The method may include measuring a capacitance-voltage (C-V) characteristic for the 3D field effect transistor device and identifying, based on the measured capacitance-voltage (C-V) characteristic, a Fin structure corresponding to the 3D field effect transistor device. The identified Fin structure is detached from the 3D field effect transistor device using a nanomanipulator probe tip. The detached Fin is then welded to the nanomanipulator probe tip using an incident focused ion beam having a voltage of less than about 1000 eV. The incident focused ion beam having a voltage of less than about 1000 eV is applied to a tip of the Fin that is welded to the nanomanipulator probe tip.
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