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Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structure
Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structure
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机译:具有与三维晶体管结构对准的铁电电容器的镶嵌自对准铁电随机存取存储器(F-RAM)的制造方法
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摘要
A method for a non-volatile, ferroelectric random access memory (F-RAM) device that includes a ferroelectric capacitor aligned with a preexisting structure is described. In one embodiment, the method includes forming an opening in an insulating layer over a contact in a planar surface of a substrate to expose at least a portion of the contact. Next a self-aligned contact (SAC) is formed electrically coupling to the contact, the SAC medially located in the opening and proximal to a sidewall thereof. A ferroelectric spacer is then formed in the opening medially of the SAC, and a top electrode spacer formed in the opening over the insulating cap and medially of the ferroelectric spacer.
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