Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor-One-Capacitor Ferroelectric Random Access Memory

摘要

It is very important to develop capacitor module technologies such as robust Pb(Zr_xTi_(1-x))O_3 (PZT) film technology at nm scaled PZT thickness and damage minimized ferroelectric capacitor etching technology are crucial for the success of high density one-transistor-one-capacitor (1T1C) ferroelectric random access memory (FRAM). We resolved this issue from the change of the capacitor etching system and optimization of the PZT/SrRuO_3 (SRO) deposition process. As a result, we realized a highly reliable sensing window for 64 Mbit 1T1C FRAM that were realized by novel technologies such as robust MOCVD PZT deposition technologies, optimized SRO electrode and damage minimized ferroelectric capacitor etching technologies.